What Can We Learn From Proton Recoils about Heavy-Ion SEE Sensitivity?

The fact that protons cause single-event effects (SEE) in most devices through production of light-ion recoils has led to attempts to bound heavy-ion SEE susceptibility through use of proton data. Although this may be a viable strategy for some devices and technologies, the data must be analyzed carefully and conservatively to avoid over-optimistic estimates of SEE performance. We examine the constraints that proton test data can impose on heavy-ion SEE susceptibility

Sun-Earth Connections: How the Sun Knocks Out My Cell Phone from 150 Million Kilometers Away

Large solar particle events (SPE) threaten many elements of critical infrastructure. A 2013 study by Lloyds of London and Atmospheric and Environmental Research recently found that if a worst-case solar event like the 1859 Carrington Event struck our planet now, it could result on $0.6-$2.36 trillion in damages to the economy. In March 2014, researchers Y. D. Liu et al. revealed that just such an event had narrowly missed Earth in July 2012. The event was observed by the STEREO A spacecraft. In this presentation, we examine how the sun can pack such a punch from 150 million km away, the threats such solar particle events pose, their mechanisms and the efforts NASA and other space agencies are carrying out to understand and mitigate such risks

Evaluation of Enhanced Low Dose Rate Sensitivity in Discrete Bipolar Junction Transistors

We evaluate the low dose rate sensitivity in several families of discrete bipolar transistors across device parameter, quality assurance level, and irradiation bias configuration. The 2N2222 showed the most significant low dose rate sensitivity, with low dose rate enhancement factor of 3.91 after 100 krad(Si). The 2N2907 also showed critical degradation levels. The devices irradiated at 10 mrad(Si)/s exceeded specifications after 40 and 50 krad(Si) for the 2N2222 and 2N2907 devices, respectively

Proton Particle Test Fluence: What's the Right Number?

While we have been utilizing standard fluence levels such as those listed in the JESD57 document, we have begun revisiting what an appropriate test fluence is when it comes to qualifying a device for single events. Instead of a fixed fluence level or until a specific number of events occurs, a different thought process is required

Statistical Methods for Large Flight Lots and Ultra-high Reliability Applications

We present statistical techniques for evaluating random and systematic errors for use in flight performance predictions for large flight lots and ultra-high reliability applications

Statistical Modeling for Radiation Hardness Assurance

We cover the models and statistics associated with single event effects (and total ionizing dose), why we need them, and how to use them: What models are used, what errors exist in real test data, and what the model allows us to say about the DUT will be discussed. In addition, how to use other sources of data such as historical, heritage, and similar part and how to apply experience, physics, and expert opinion to the analysis will be covered. Also included will be concepts of Bayesian statistics, data fitting, and bounding rates

Evaluation of Low Dose Rate Sensitivity in Discrete Bipolar Junction Transistors

We evaluate the low dose rate sensitivity in several families of discrete bipolar transistors across device parameter, quality assurance level, and irradiation bias configuration. We discuss the implications of the results for radiation hardness assuranc

Heavy Ion and Proton-Induced Single Event Upset Characteristics of a 3D NAND Flash Memory

We evaluated the effects of heavy ion and proton irradiation for a 3D NAND flash. The 3D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of identical density in the multiple-cell level (MLC) storage mode. The 3D NAND showed significantly reduced SEU susceptibility in single-level-cell (SLC) storage mode. Additionally, the 3D NAND showed less multiple-bit upset susceptibility than the planar NAND, with fewer number of upset bits per byte and smaller cross sections overall. However, the 3D architecture exhibited angular sensitivities for both base and face angles, reflecting the anisotropic nature of the SEU vulnerability in space. Furthermore, the SEU cross section decreased with increasing fluence for both the 3D NAND and the Micron 16 nm planar NAND, which suggests that typical heavy ion test fluences will underestimate the upset rate during a space mission. These unique characteristics introduce complexity to traditional ground irradiation test procedures

Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets of NAND Flash Memory

We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found the single-event upset (SEU) cross section varied inversely with fluence. The SEU cross section decreased with increasing fluence. We attribute the effect to the variable upset sensitivities of the memory cells. The current test standards and procedures assume that SEU follow a Poisson process and do not take into account the variability in the error rate with fluence. Therefore, heavy ion irradiation of devices with variable upset sensitivity distribution using typical fluence levels may underestimate the cross section and on-orbit event rate

Radiation Single Event Effects (SEE) Impact on Complex Avionics Architecture Reliability

The NASA Engineering and Safety Center (NESC) has an urgent need to understand how system-level reliability of an avionics architecture is compromised when portions of the architecture are temporarily unavailable due to single event effects (SEE). The proposed activity parametrically evaluated these SEE impacts on system reliability based on mission duration, upset rate and recovery times for a representative redundant architecture. The key stakeholders for this study are NASA programs and projects that expect to use avionics architectures with electrical, electronic and electromechanical (EEE) parts susceptible to SEE when exposed to the mission expected radiation environment